■ 제품필수정보

제조사	Infineon
제조사품명	IRF6668TRPBF
간략설명	N-Channel MOSFET, 55 A, 80 V, 7-Pin DirectFET ISOMETRIC

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 55 A Maximum Drain Source Voltage = 80 V
패키지 = DirectFET ISOMETRIC
장착형태 = Surface Mount
핀수 = 7 Maximum Drain Source Resistance = 0.015 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.9V
칩당 요소 수 = 1
시리즈 = HEXFET The Infineon HEXFET® Power MOSFET has 80V maximum drain source voltage in a DirectFET MZ package rated at 55 amperes optimized with low on resistance. The IRF6668PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.Lead-Free (Qualified up to 260°C Reflow) Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses High Cdv/dt Immunity