상품이미지
  •  상품이미지

MPN : IPA60R360P7SXKSA1

N-Channel MOSFET, 9 A, 600 V, 3-Pin TO-220 FP
  • 브랜드

    Infineon

  • 무원상품코드

    M011256008887

  • 타입별
    TU
  • 주문가능수량

    21,900

  • 최소주문수량50
  • 판매단위50
  • 제품정보
  • 배송정보
    (영업일 기준)
  • 특이사항
구매수량 :

*대량구매해택
  • 수량단가1 : 50개 ~ 1,236원

  • 수량단가2 : 100개 ~ 1,198원

  • 수량단가3 : 200개 ~ 1,162원


총금액
(VAT 별도)
  • 상품정보
  • 상품후기
  • 상품문의
  • 배송/AS안내

■ 제품필수정보

제조사 Infineon
제조사품명 IPA60R360P7SXKSA1
간략설명 N-Channel MOSFET, 9 A, 600 V, 3-Pin TO-220 FP

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 9 A Maximum Drain Source Voltage = 600 V
패키지 = TO-220 FP
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 0.36 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V
칩당 요소 수 = 1
시리즈 = 600V CoolMOS??P7 The Infineon 600V Cool MOS??P7 is the successor to the 600V Cool MOS??P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the Cool MOS??7th generation platform ensure its high efficiency. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching application seven more efficient, more compact and much cooler.Suitable for hard and soft switching (PFC and LLC) due to an outstanding ??commutation ruggedness Excellent ESD robustness >2kV(HBM) for all products Significant reduction of switching and conduction losses Wide portfolio in through hole and surface mount packages

순번
분류
제목
작성자
날짜
데이터 없음 ...
순번
답변 상태
제목
작성자
날짜
1
신청 접수
2024-11-01
2
신청 접수
2024-10-31
3
답변 완료
2024-10-24
4
신청 접수
2024-10-21
5
신청 접수
2024-05-27
7
답변 완료
2024-05-13
8
답변 완료
2024-04-16
9
답변 완료
2023-12-08
10
답변 완료
2023-11-21
상품정보이미지