■ 제품필수정보

제조사	Infineon
제조사품명	IRF6616TRPBF
간략설명	N-Channel MOSFET, 106 A, 40 V DirectFET ISOMETRIC Infineon IRF6616TRPBF

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 106 A Maximum Drain Source Voltage = 40 V
패키지 = DirectFET ISOMETRIC
장착형태 = Surface Mount Maximum Drain Source Resistance = 0.005 O Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.25V Transistor Material = Si
시리즈 = HEXFET The Infineon combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced packaging platform to achieve low combined on-state and switching loss in a package that has the footprint of a SO-8 and only 0.7 mm profile. The package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques etc. The package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.Low Conduction and Switching Losses Optimized for High Frequency Switching