■ 제품필수정보

제조사	STMicroelectronics
제조사품명	STD12N60DM6
간략설명	N-Channel MOSFET, 10 A, 600 V, 3-Pin DPAK STMicroelectronics STD12N60DM6

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 10 A Maximum Drain Source Voltage = 600 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 390 mΩ Maximum Gate Threshold Voltage = 4.75V
칩당 요소 수 = 1 The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast-recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.Fast-recovery body diode Lower RDS(on) per area vs previous generation Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected