■ 제품필수정보

제조사	Vishay
제조사품명	SiSS52DN-T1-GE3
간략설명	N-Channel MOSFET, 162 A, 30 V, 8-Pin PowerPAK 1212-8S Vishay SiSS52DN-T1-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 162 A Maximum Drain Source Voltage = 30 V
패키지 = PowerPAK 1212-8S
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 0.00095 Ω Maximum Gate Threshold Voltage = 1 ??2.2V
칩당 요소 수 = 1 The Vishay N-Channel 30 V (D-S) MOSFET has PowerPAK 1212-8S package type.TrenchFET Gen V power MOSFET Very low RDS x Qg figure-of-merit (FOM) Enables higher power density with very low RDS(on) and thermally enhanced compact package 100 % Rg and UIS tested