■ 제품필수정보

제조사	Vishay
제조사품명	SiHB186N60EF-GE3
간략설명	N-Channel MOSFET, 8.4 A, 600 V, 3-Pin D2PAK Vishay SiHB186N60EF-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 8.4 A Maximum Drain Source Voltage = 600 V
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 0.168 Ω Maximum Gate Threshold Voltage = 3 ??5V
칩당 요소 수 = 1
시리즈 = EF The Vishay EF
시리즈 Power MOSFET With Fast Body Diode has D2PAK (TO-263) package type.4th generation E series technology Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Co(er)) Reduced switching and conduction losses Avalanche energy rated (UIS)