■ 제품필수정보
| 제조사 |
Vishay |
| 제조사품명 |
SiDR626LDP-T1-RE3 |
| 간략설명 |
N-Channel MOSFET, 204 A, 60 V, 8-Pin PowerPAK SO-8DC Vishay SiDR626LDP-T1-RE3 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 204 A Maximum Drain Source Voltage = 60 V
패키지 = PowerPAK SO-8DC
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 0.0012 Ω Maximum Gate Threshold Voltage = 1 ??2.5V
칩당 요소 수 = 1 The Vishay N-Channel 60 V (D-S) MOSFET has PowerPAK SO-8DC package type.TrenchFET® Gen IV power MOSFET Very low RDS - Qg figure-of-merit (FOM) Tuned for the lowest RDS - Qoss FOM 100 % Rg and UIS tested Top side cooling feature provides additional venue for thermal transfer
