■ 제품필수정보

제조사	STMicroelectronics
제조사품명	STGWA100H65DFB2
간략설명	STMicroelectronics STGWA100H65DFB2 IGBT, 145 A 650 V, 3-Pin TO-247

■ 제품사양

Maximum Continuous Collector Current = 145 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 441 W
패키지 = TO-247
핀수 = 3 Transistor Configuration = Single The STMicroelectronics Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO-247 long leads package.Maximum junction temperature: TJ = 175 °C Low VCE(sat) = 1.55 V(typ.) @ IC = 100 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coefficient