■ 제품필수정보
| 제조사 |
Vishay |
| 제조사품명 |
SIHA125N60EF-GE3 |
| 간략설명 |
N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 FP Vishay SIHA125N60EF-GE3 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 11 A Maximum Drain Source Voltage = 600 V
패키지 = TO-220 FP
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 0.125 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V
칩당 요소 수 = 1
시리즈 = SiHA125N60EF The Vishay EF
시리즈 Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.Avalanche energy rated (UIS) Low figure-of-merit (FOM) Ron x Qg
