■ 제품필수정보

제조사	STMicroelectronics
제조사품명	SCT10N120H
간략설명	SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 STMicroelectronics SCT10N120H

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 12 A Maximum Drain Source Voltage = 1200 V
패키지 = HiP247
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 0.52 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.5V
칩당 요소 수 = 1
시리즈 = SCT10N120H The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device??s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (TJ = 200°C) Very fast and robust intrinsic body diode Low capacitance