■ 제품필수정보
| 제조사 | Onsemi |
|---|---|
| 제조사품명 | NXH35C120L2C2SG |
| 간략설명 | onsemi NXH35C120L2C2SG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole |
■ 제품사양
Maximum Continuous Collector Current = 35 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20.0V Number of Transistors = 6
