■ 제품필수정보
| 제조사 |
Vishay |
| 제조사품명 |
SIDR638DP-T1-RE3 |
| 간략설명 |
N-Channel MOSFET, 100 A, 40 V, 8-Pin PowerPAK SO-8DC Vishay SIDR638DP-T1-RE3 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 100 A Maximum Drain Source Voltage = 40 V
패키지 = PowerPAK SO-8DC
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 0.00088 Ω, 0.00116 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.3V
칩당 요소 수 = 1
시리즈 = TrenchFET® Gen IV The Vishay SIDR638DP-T1-RE3 is a N-channel 40V (D-S) MOSFET.TrenchFET Gen IV power MOSFET Very low RDS - Qg figure-of-merit (FOM) Tuned for the lowest RDS - Qoss FOM Top side cooling feature provides additional venue for thermal transfer 100 % Rg and UIS tested
