■ 제품필수정보

제조사	Onsemi
제조사품명	NVBG020N120SC1
간략설명	SiC N-Channel MOSFET, 98 A, 1200 V, 7-Pin D2PAK onsemi NVBG020N120SC1OS

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 98 A Maximum Drain Source Voltage = 1200 V
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 7 Maximum Drain Source Resistance = 0.028 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.3V
칩당 요소 수 = 1 The On Semiconductor single N-channel silicon carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. It include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.Ultra low gate charge (typ. QG(tot) = 220nC) Low effective output capacitance 100% avalanche tested Qualified according to AEC??Q101