■ 제품필수정보
제조사 |
Onsemi |
제조사품명 |
AFGHL50T65SQDC |
간략설명 |
onsemi AFGHL50T65SQDCOS NPN Bipolar Transistor, 100 A, 650 V, 3-Pin TO-247 |
■ 제품사양
Transistor
타입 = NPN Maximum DC Collector Current = 100 A Maximum Collector Emitter Voltage = 650 V
패키지 = TO-247
장착형태 = Through Hole Maximum Power Dissipation = 238 W Transistor Configuration = Single Maximum Operating Frequency = 1 MHz
핀수 = 3
칩당 요소 수 = 1
크기 = 15.87 x 4.82 x 20.82mm Using novel field stop IGBT and SiC SBD technology, ON semiconductors new series of hybrid IGBTs offer the optimum performance for hard switching application. The device co-packages a silicon-based IGBT with a SiC Schottky barrier diode, resulting in an excellent tradeoff between the lower performance of silicon-based solutions and the higher cost of entirely SiC-based solutions.Copacked with SiC schottky barrier diode Ultra low reverse recovery loss Maximum Junction Temperature, Tj=175°C Higher reliability Very low switching and conduction losses Positive temperature co-efficient Tight parameter distribution Applications Automotive Industrial Inverter DC-DC Converter PFC, Totem Pole Bridgeless Hard Switching