■ 제품필수정보

제조사	Onsemi
제조사품명	FCHD190N65S3R0-F155
간략설명	N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-247AD ON Semiconductor FCHD190N65S3R0-F155

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 17 A Maximum Drain Source Voltage = 650 V
패키지 = TO-247AD
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 190 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.5V Minimum Gate Threshold Voltage = 2.5V Maximum Power Dissipation = 144 W Transistor Configuration = Single Maximum Gate Source Voltage = ±30 V Width = 5.3mm
최소 작동 온도 = -55 °C SUPERFET III MOSFET is ON Semiconductor??s brand??new high voltage super??junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on??resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.701 V @ TJ = 150 oC Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF) Ultra Low Gate Charge (Typ. Qg = 33 nC) Optimized Capacitance Typ. RDS(on) = 159 mΩ Internal Gate Resistance: 0.5 Ω Low switching loss Low switching loss Lower peak Vds and lower Vgs oscillation Application Telecommunication Cloud system Industrial