■ 제품필수정보

제조사	Infineon
제조사품명	CY14B104LA-ZS25XI
간략설명	Infineon 4Mbit 45ns NVRAM, 44-Pin TSOP, CY14B104LA-ZS25XI

■ 제품사양

Memory Size = 4Mbit Organisation = 512K x 8 bit Interface
타입 = Parallel
데이터 버스 = 8bit Maximum Random Access Time = 45ns
장착형태 = Surface Mount
패키지 = TSOP
핀수 = 44
크기 = 18.51 x 10.26 x 1.04mm Length = 18.51mm Width = 10.26mm
높이 = 1.04mm Maximum Operating Supply Voltage = 3.6 V
최대 작동 온도 = +85 °C Number of Words = 512K The Cypress CY14B104LA/CY14B104NA is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16-bits each. The embedded non-volatile elements incorporate QuantumTrap technology, producing reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.