■ 제품필수정보

제조사	Wolfspeed
제조사품명	CAB450M12XM3
간략설명	SiC MOSFET, 1200 V Wolfspeed CAB450M12XM3

■ 제품사양

Maximum Drain Source Voltage = 1200 V Maximum Drain Source Resistance = 4.6 mΩ Maximum Gate Threshold Voltage = 3.6V Minimum Gate Threshold Voltage = 1.8V Maximum Power Dissipation = 50 mW Maximum Gate Source Voltage = -4 V, 19 V Width = 53mm
높이 = 15.75mm High Power Density Footprint High Temperature (175 °C) Operation Low Inductance (6.7 nH) Design Implements Conduction-Optimized Third Generation MOSFET Technology Terminal Layout Simplifies Bus Bar Design Integrated Temperature Sensing Dedicated Drain-Kelvin Pin Silicon Nitride Insulator and Copper Baseplate Applications Motor & Traction Drives UPS EV Chargers