상품이미지
  •  상품이미지

MPN : FOD3125

onsemi, FOD3125 DC Input IGBT, MOSFET Output Optocoupler, Through Hole, 8-Pin PDIP
  • 브랜드

    Onsemi

  • 무원상품코드

    M010979000566

  • 타입별
    PK
  • 주문가능수량

    21

  • 최소주문수량5
  • 판매단위5
  • 제품정보
  • 배송정보
    (영업일 기준)
  • 특이사항
구매수량 :

*대량구매해택
  • 수량단가1 : 5개 ~ 4,464원

  • 수량단가2 : 250개 ~ 4,365원

  • 수량단가3 : 500개 ~ 4,272원


총금액
(VAT 별도)
  • 상품정보
  • 상품후기
  • 상품문의
  • 배송/AS안내

■ 제품필수정보

제조사 Onsemi
제조사품명 FOD3125
간략설명 onsemi, FOD3125 DC Input IGBT, MOSFET Output Optocoupler, Through Hole, 8-Pin PDIP

■ 제품사양


장착형태 = Through Hole Output Device = IGBT, MOSFET Maximum Forward Voltage = 1.8V Number of Channels = 1 Number of Pins = 8
패키지 = PDIP Input Current
타입 = DC Typical Rise Time = 60ns Maximum Input Current = 16 mA Isolation Voltage = 5000 (Minimum) Vrms Logic Output = Yes Typical Fall Time = 60ns The FOD3125 is a 2.5 A Output Current Gate Drive Optocoupler, capable of driving most medium power IGBT/MOSFET at high temperature up to 125°C. It is ideally suited for fast switching driving of power IGBT and MOSFETs used in motor control inverter applications, and high performance power system. It utilizes ON Semiconductor??s coplanar packaging technology, Optoplanar®, and optimized IC design to achieve high noise immunity, characterized by high common mode rejection. It consists of a gallium aluminium arsenide (AlGaAs) light emitting diode optically coupled to an integrated circuit with a high-speed driver for push-pull MOSFET output stage.Extended Industrial Temperate Range, -40°C to 125°C High Noise Immunity Characterized by 35kV/μs Minimum Common Mode Rejection 2.5 A Peak Output Current Driving Capability for Most 1200 V/20 A IGBT Use of P-channel MOSFETs at Output Stage Enables Output Voltage Swing Close to The Supply Rail Fast switching speed Wide Supply Voltage Range from 15 V to 30 V Fast Switching Speed 400 ns max. Propagation Delay 100 ns max. Pulse Width Distortion Under-Voltage LockOut (UVLO) with hysteresis Applications Industrial Inverter Uninterruptible Power Supply Induction Heating Isolated IGBT/Power MOSFET Gate Drive

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