■ 제품필수정보

제조사	STMicroelectronics
제조사품명	STD5NM60T4
간략설명	N-Channel MOSFET, 5 A, 650 V, 3-Pin IPAK STMicroelectronics STD5NM60T4

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 5 A Maximum Drain Source Voltage = 650 V
패키지 = IPAK (TO-251)
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 1 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Minimum Gate Threshold Voltage = 4V Maximum Power Dissipation = 96 W Transistor Configuration = Single Maximum Gate Source Voltage = ±30 V Width = 2.4mm
높이 = 6.2mm The MDmesh??is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company??s PowerMESH??horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company??s proprietary strip technique yields overall dynamic performance.Low input capacitance and gate charge HIgh dv/dt and avalanche capabilities Low gate input resistance Applications Switching applications