■ 제품필수정보

제조사	STMicroelectronics
제조사품명	STD11N60DM2
간략설명	N-Channel MOSFET, 10 A, 3-Pin DPAK STMicroelectronics STD11N60DM2

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 10 A
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 420 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Minimum Gate Threshold Voltage = 4V Maximum Power Dissipation = 110 W Transistor Configuration = Single Maximum Gate Source Voltage = ±25 V Width = 6.2mm
높이 = 2.17mm This high voltage N-channel Power MOSFET is part of the MDmesh??DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance Extremely high dv/dt ruggedness Zener-protected Applications Switching applications