■ 제품필수정보

제조사	Vishay
제조사품명	SIRA99DP-T1-GE3
간략설명	P-Channel MOSFET, 195 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA99DP-T1-GE3

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 195 A Maximum Drain Source Voltage = 30 V
패키지 = PowerPAK SO-8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 2.6 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.5V Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 104 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +16 V Width = 5mm
높이 = 1.07mm P-Channel 30 V (D-S) MOSFET.TrenchFET® Gen IV p-channel power MOSFET Very low RDS(on) minimizes voltage drop and reduces conduction loss Eliminates the need for charge pump