■ 제품필수정보

제조사	Vishay
제조사품명	SISS60DN-T1-GE3
간략설명	N-Channel MOSFET, 181.8 A, 30 V, 8-Pin PowerPAK 1212-8S Vishay SISS60DN-T1-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 181.8 A Maximum Drain Source Voltage = 30 V
패키지 = PowerPAK 1212-8S
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 2.01 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.5V Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 65.8 W Transistor Configuration = Single Maximum Gate Source Voltage = -12 V, +16 V Width = 3.3mm
높이 = 0.78mm