■ 제품필수정보
| 제조사 |
Vishay |
| 제조사품명 |
SISF02DN-T1-GE3 |
| 간략설명 |
Dual N-Channel MOSFET, 60 A, 25 V, 8-Pin PowerPAK 1212-8SCD Vishay SISF02DN-T1-GE3 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 60 A Maximum Drain Source Voltage = 25 V
패키지 = PowerPAK 1212-8SCD
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 5 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.3V Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 69.4 W Transistor Configuration = Common Drain Maximum Gate Source Voltage = -12 V, +16 V Width = 3.4mm
높이 = 0.75mm
