■ 제품필수정보

제조사	Vishay
제조사품명	SIS862ADN-T1-GE3
간략설명	N-Channel MOSFET, 52 A, 60 V, 8-Pin PowerPAK 1212-8 Vishay SIS862ADN-T1-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 52 A Maximum Drain Source Voltage = 60 V
패키지 = PowerPAK 1212-8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 11 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.5V Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 39 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V Width = 3.15mm
높이 = 1.07mm N-Channel 60 V (D-S) MOSFETTrenchFET® Gen IV power MOSFET Very low RDS x Qg figure-of-merit (FOM) Tuned for the lowest RDS x Qoss FOM