■ 제품필수정보
| 제조사 |
Vishay |
| 제조사품명 |
SIHD186N60EF-GE3 |
| 간략설명 |
N-Channel MOSFET, 19 A, 600 V, 3-Pin DPAK Vishay SIHD186N60EF-GE3 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 19 A Maximum Drain Source Voltage = 600 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 201 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Minimum Gate Threshold Voltage = 3V Maximum Power Dissipation = 156 W Transistor Configuration = Single Maximum Gate Source Voltage = ±30 V Width = 6.22mm
최소 작동 온도 = -55 °C
