■ 제품필수정보

제조사	Onsemi
제조사품명	FDC3601N
간략설명	ON Semi FDC3601N Dual Digital Transistor, 6-Pin TSOT-23

■ 제품사양

패키지 = TSOT-23
장착형태 = Surface Mount Maximum Power Dissipation = 960 mW
핀수 = 6
칩당 요소 수 = 2
최대 작동 온도 = +150 °C These N-Channel 100V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.1.0 A, 100 V RDS(on) = 500 mΩ@ VGS = 10 V RDS(on) = 550 mΩ @ VGS = 6 V Low gate charge (3.7nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) SuperSOT??6 package: small footprint 72%(smaller than standard SO-8), low profile (1mm thick) Applications This product is general usage and suitable for many different applications.