■ 제품필수정보

제조사	Onsemi
제조사품명	MJH11019G
간략설명	onsemi MJH11019G PNP Digital Transistor, 200 V dc, 3-Pin SOT-93

■ 제품사양

Transistor
타입 = PNP Maximum Collector Emitter Voltage = 200 V dc
패키지 = SOT-93
장착형태 = Through Hole Maximum Power Dissipation = 150 W Transistor Configuration = Single Maximum Emitter Base Voltage = 5 V dc
핀수 = 3
칩당 요소 수 = 1
최대 작동 온도 = +150 °C The Darlington Bipolar Power Transistor is designed for use as general purpose amplifiers, low frequency switching and motor control applications. The MJH11017, MJH11019, MJH11021 (PNP), MJH11018, MJH11020, MJH11022 (NPN) are complementary devices.High DC Current
이득 @ 10 Adc - hFE = 400 Min (All
타입s) Collector-Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) MJH11018, 17 VCEO(sus) = 200 Vdc (Min) - MJH11020, 19 VCEO(sus) = 250 Vdc (Min) - MJH11022, 21 Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A VCE(sat) = 1.8 V (Typ) @ IC = 10 A Monolithic Construction Pb-Free Packages are Available