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MPN : S29GL256S10TFIV20

Infineon NOR 256Mbit Parallel Flash Memory 56-Pin TSOP, S29GL256S10TFIV20
  • 브랜드

    Infineon

  • 무원상품코드

    M010939000121

  • 타입별
    PK
  • 주문가능수량

    품 절

  • 최소주문수량2
  • 판매단위2
  • 제품정보
  • 배송정보
    (영업일 기준)
  • 특이사항
구매수량 :

*대량구매해택
  • 수량단가1 : 2개 ~ 10,318원

  • 수량단가2 : 24개 ~ 10,092원

  • 수량단가3 : 46개 ~ 9,875원


총금액
(VAT 별도)

  • 상품정보
  • 상품후기
  • 상품문의
  • 배송/AS안내

■ 제품필수정보

제조사 Infineon
제조사품명 S29GL256S10TFIV20
간략설명 Infineon NOR 256Mbit Parallel Flash Memory 56-Pin TSOP, S29GL256S10TFIV20

■ 제품사양

Memory Size = 256Mbit Interface
타입 = Parallel
패키지 = TSOP
핀수 = 56 Organisation = 16M x 16 Cell
타입 = NOR Maximum Random Access Time = 100ns CMOS 3.0 Volt Core with Versatile I/O 65 nm MirrorBit Eclipse Technology Single supply (VCC) for read / program / erase (2.7 V to 3.6 V) Versatile I/O Feature Wide I/O voltage range (VIO): 1.65 V to VCC x16 data bus Asynchronous 32-byte Page read 512-byte Programming Buffer Programming in Page multiples, up to a maximum of 512 bytes Single word and multiple program on same word options Automatic Error Checking and Correction (ECC) internal hardware ECC with single bit error correction Sector Erase Uniform 128-kbyte sectors Suspend and Resume commands for Program and Erase operations Status Register, Data Polling, and Ready/Busy pin methods to determine device status Advanced Sector Protection (ASP) Volatile and non-volatile protection methods for each sector Separate 1024-byte One Time Program (OTP) array with two lockable regions Common Flash Interface (CFI) parameter table Temperature Range / Grade Industrial (-40°C to +85°C) Industrial Plus(-40°C to +105°C) 100,000 Program / Erase Cycles 20 Years Data Retention Packaging Options 56-pin TSOP 64-ball LAA Fortified BGA, 13 mm x 11 mm 64-ball LAE Fortified BGA, 9 mm x 9 mm 56-ball VBU Fortified BGA, 9 mm x 7 mm

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