■ 제품필수정보
제조사 |
Onsemi |
제조사품명 |
FDMS86181 |
간략설명 |
N-Channel MOSFET, 124 A, 100 V, 8-Pin PQFN8 onsemi FDMS86181 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 124 A Maximum Drain Source Voltage = 100 V
패키지 = PQFN8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 12 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 125 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V
최대 작동 온도 = +150 °C
높이 = 1.05mm This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.Shielded Gate MOSFET Technology Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A ADD 50% lower Qrr than other MOSFET suppliers Lowers switching noise/EMI This product is general usage and suitable for many different applications.