상품이미지
  •  상품이미지

MPN : FCMT180N65S3

N-Channel MOSFET, 17 A, 650 V, 4-Pin Power88 onsemi FCMT180N65S3
  • 브랜드

    Onsemi

  • 무원상품코드

    M010846008141

  • 타입별
    PK
  • 주문가능수량

    품 절

  • 최소주문수량10
  • 판매단위10
  • 제품정보
  • 배송정보
    (영업일 기준)
  • 특이사항
구매수량 :

*대량구매해택
  • 수량단가1 : 10개 ~ 3,376원

  • 수량단가2 : 750개 ~ 3,309원

  • 수량단가3 : 1500개 ~ 3,242원


총금액
(VAT 별도)

  • 상품정보
  • 상품후기
  • 상품문의
  • 배송/AS안내

■ 제품필수정보

제조사 Onsemi
제조사품명 FCMT180N65S3
간략설명 N-Channel MOSFET, 17 A, 650 V, 4-Pin Power88 onsemi FCMT180N65S3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 17 A Maximum Drain Source Voltage = 650 V
패키지 = Power88
장착형태 = Surface Mount
핀수 = 4 Maximum Drain Source Resistance = 180 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.5V Minimum Gate Threshold Voltage = 2.5V Maximum Power Dissipation = 139 W Transistor Configuration = Single Maximum Gate Source Voltage = ±30 V Width = 8mm
높이 = 1.05mm SUPERFET III MOSFET is ON Semiconductor??s brand??new high voltage super??junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on??resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.700 V @ TJ = 150 oC Leadless Ultra-thin SMD package Kelvin contact Ultra Low Gate Charge (Typ. Qg = 33 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 305 pF) Optimized Capacitance Typ. RDS(on) = 152 mΩ Moisture Sensitivity Level 1 guarantee Internal Gate Resistance: 0.5 Ω Benefits: Higher system reliability at low temperature operation High power density Low gate noise and switching loss Low switching loss Low switching loss Lower peak Vds and lower Vgs oscillation Applications: Computing Telecommunication Industrial End Products: Telecom / Server Adapter LED Lighting

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