■ 제품필수정보

제조사	Onsemi
제조사품명	FGH40T120SQDNL4
간략설명	onsemi FGH40T120SQDNL4, P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247, Through Hole

■ 제품사양

Maximum Continuous Collector Current = 160 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±30V Maximum Power Dissipation = 454 W
패키지 = TO-247
장착형태 = Through Hole Channel
타입 = P
핀수 = 4 Transistor Configuration = Single
크기 = 15.8 x 5.2 x 22.74mm
최소 작동 온도 = -55 °C This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on??state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co??packaged free wheeling diode with a low forward voltage.Extremely Efficient Trench with Field Stop Technology ??TJmax = 175°C ??Soft Fast Reverse Recovery Diode ??Optimized for High Speed Switching ??These are Pb??Free Devices Applications Solar inverter UPS Welding