■ 제품필수정보

제조사	Onsemi
제조사품명	FGH60T65SQD-F155
간략설명	onsemi FGH60T65SQD-F155, P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole

■ 제품사양

Maximum Continuous Collector Current = 60 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±30V Maximum Power Dissipation = 333 W
패키지 = TO-247 G03
장착형태 = Through Hole Channel
타입 = P
핀수 = 3 Transistor Configuration = Single
크기 = 15.87 x 4.82 x 20.82mm
최소 작동 온도 = -55 °C Using novel field stop IGBT technology, ON semiconductor??s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.Maximum Junction Temperature: TJ =175°C Positive Temperature Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 60 A High Input Impedance Fast Switching Tighten Parameter Distribution Applications Solar Inverter, UPS, Welder, Telecom, ESS, PFC