■ 제품필수정보

제조사	Vishay Siliconix
제조사품명	SQJ872EP-T1_GE3
간략설명	N-Channel MOSFET, 24.5 A, 150 V, 4-Pin PowerPAK SO-8L Vishay Siliconix SQJ872EP-T1_GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 24.5 A Maximum Drain Source Voltage = 150 V
패키지 = PowerPAK SO-8L
장착형태 = Surface Mount
핀수 = 4 Maximum Drain Source Resistance = 80 m??Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.5V Minimum Gate Threshold Voltage = 3.5V Maximum Power Dissipation = 55 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V Width = 5mm
높이 = 1.07mm TrenchFET® power MOSFET