■ 제품필수정보

제조사	Vishay Siliconix
제조사품명	SiR188DP-T1-RE3
간략설명	N-Channel MOSFET, 60 A, 60 V, 8-Pin PowerPAK SO-8 Vishay Siliconix SiR188DP-T1-RE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 60 A Maximum Drain Source Voltage = 60 V
패키지 = PowerPAK SO-8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 4 m??Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2V Minimum Gate Threshold Voltage = 3.6V Maximum Power Dissipation = 65.7 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V
칩당 요소 수 = 1
시리즈 = TrenchFET TrenchFET® Gen IV power MOSFET Very low RDS - Qg figure-of-merit (FOM) Tuned for the lowest RDS - Qoss FOM