■ 제품필수정보

제조사	Microchip
제조사품명	TP2540N8-G
간략설명	P-Channel MOSFET, 125 mA, 400 V, 3-Pin TO-243AA Microchip TP2540N8-G

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 125 mA Maximum Drain Source Voltage = 400 V
패키지 = TO-243AA
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 30 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.4V Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 1.6 W Transistor Configuration = Single Maximum Gate Source Voltage = 20 V
최대 작동 온도 = +150 °C Forward Diode Voltage = 1.8V This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.Low threshold (-2.4V max.) High input impedance Low input capacitance (60pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage