■ 제품필수정보

제조사	Microchip
제조사품명	TN2106K1-G
간략설명	N-Channel MOSFET, 280 mA, 60 V, 3-Pin SOT-23 Microchip TN2106K1-G

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 280 mA Maximum Drain Source Voltage = 60 V
패키지 = TO-236
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 5 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2V Minimum Gate Threshold Voltage = 0.6V Maximum Power Dissipation = 360 mW Transistor Configuration = Single Maximum Gate Source Voltage = 20 V Width = 1.4mm
높이 = 1.02mm This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain