■ 제품필수정보
제조사 |
ROHM |
제조사품명 |
R6007END3TL1 |
간략설명 |
N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK ROHM R6007END3TL1 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 7 A Maximum Drain Source Voltage = 600 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 620 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 78 W Transistor Configuration = Single Maximum Gate Source Voltage = ±30 V Width = 6.4mm Forward Diode Voltage = 1.5V Power MOSFET R6007END3 is suitable for switching power supply.Low on-resistance. Fast switching speed. Drive circuits can be simple. Parallel use is easy. Pb-free plating