상품이미지
  •  상품이미지

MPN : DN2540N8-G

N-Channel MOSFET, 170 mA, 400 V Depletion, 3-Pin TO-243AA Microchip DN2540N8-G
  • 브랜드

    Microchip

  • 무원상품코드

    M010843003198

  • 타입별
    RL
  • 주문가능수량

    1,990

  • 최소주문수량2,000
  • 판매단위2,000
  • 제품정보
  • 배송정보
    (영업일 기준)
  • 특이사항
구매수량 :

*대량구매해택
  • 수량단가1 : 2000개 ~ 1,119원

  • 수량단가2 : 10000개 ~ 1,097원


총금액
(VAT 별도)
  • 상품정보
  • 상품후기
  • 상품문의
  • 배송/AS안내

■ 제품필수정보

제조사 Microchip
제조사품명 DN2540N8-G
간략설명 N-Channel MOSFET, 170 mA, 400 V Depletion, 3-Pin TO-243AA Microchip DN2540N8-G

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 170 mA Maximum Drain Source Voltage = 400 V
패키지 = TO-243AA
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 25 Ω Channel Mode = Depletion Maximum Power Dissipation = 1.6 W Transistor Configuration = Single Maximum Gate Source Voltage = 20 V Length = 4.6mm
높이 = 1.6mm DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.Additional Features: High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

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