■ 제품필수정보

제조사	Onsemi
제조사품명	FCP067N65S3
간략설명	N-Channel MOSFET, 44 A, 650 V, 3-Pin TO-220 onsemi FCP067N65S3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 44 A Maximum Drain Source Voltage = 650 V
패키지 = TO-220
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 67 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.5V Minimum Gate Threshold Voltage = 2.5V Maximum Power Dissipation = 312 W Transistor Configuration = Single Maximum Gate Source Voltage = ±30 V Length = 10.67mm Forward Diode Voltage = 1.2V SuperFET® III MOSFET is ON Semiconductor??s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.700 V @ TJ = 150 oC Higher system reliability at low temperature operation Ultra Low Gate Charge (Typ. Qg = 30 nC) Lower switching loss Low Effective Output Capacitance (Typ. Coss(eff.) = 277 pF) Lower switching loss Optimized Capacitance Lower peak Vds and lower Vgs oscillation Internal Gate resistance: 7.0 ohm Lower peak Vds and lower Vgs oscillation Typ. RDS(on) = 170 m??Wave soldering guarantee Computing Consumer Industrial Telecom / Server Solar inverter / UPS EVC Automation