■ 제품필수정보

제조사	Onsemi
제조사품명	NVD5C464NT4G
간략설명	N-Channel MOSFET, 59 A, 40 V, 3-Pin DPAK onsemi NVD5C464NT4G

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 59 A Maximum Drain Source Voltage = 40 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 5.8 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 40 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V Typical Gate Charge @ Vgs = 20 nC @ 10 V
높이 = 2.25mm SuperFET® III MOSFET is ON Semiconductor??s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency.700 V @ TJ = 150 oC Higher system reliability at low temperature operation Ultra Low Gate Charge (Typ. Qg = 259 nC) Lower switching loss Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF) Lower switching loss Excellent body diode performance (low Qrr, robust body diode) Higher system reliability in LLC and Phase shift full bridge circuit Optimized Capacitance Lower peak Vds and lower Vgs oscillation Typ. RDS(on) = 23 mΩ