■ 제품필수정보

제조사	ROHM
제조사품명	RQ3E180AJTB
간략설명	N-Channel MOSFET, 30 A, 30 V, 8-Pin HSMT ROHM RQ3E180AJTB

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 30 A Maximum Drain Source Voltage = 30 V
패키지 = HSMT
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 5.8 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 1.5V Minimum Gate Threshold Voltage = 0.5V Maximum Power Dissipation = 30 W Transistor Configuration = Single Maximum Gate Source Voltage = ±12 V Width = 3.1mm Forward Diode Voltage = 1.2V RQ3E180AJ is MOSFET for switching application that features Low on-resistance.Low on - resistance. Small Surface Mount Package. Pb-free lead plating.