■ 제품필수정보

제조사	Toshiba
제조사품명	TK31V60W5
간략설명	N-Channel MOSFET, 30.8 A, 600 V, 5-Pin DFN Toshiba TK31V60W5

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 30.8 A Maximum Drain Source Voltage = 600 V
패키지 = DFN
장착형태 = Surface Mount
핀수 = 5 Maximum Drain Source Resistance = 109 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.5V Minimum Gate Threshold Voltage = 3V Maximum Power Dissipation = 240 W Transistor Configuration = Single Maximum Gate Source Voltage = ±30 V Length = 8mm
높이 = 0.85mm Switching Voltage Regulators Fast reverse recovery time: trr = 135 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.087 ??typ.) Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.5 mA)