■ 제품필수정보

제조사	Toshiba
제조사품명	TK65G10N1
간략설명	N-Channel MOSFET, 136 A, 100 V, 3-Pin D2PAK Toshiba TK65G10N1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 136 A Maximum Drain Source Voltage = 100 V
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 4.5 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 156 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V Width = 10.27mm
높이 = 4.46mm Low drain-source on-resistance: RDS(ON) = 3.8 m??(typ.) (VGS = 10 V) Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)