■ 제품필수정보
제조사 |
Nexperia |
제조사품명 |
BSH111BKR |
간략설명 |
N-Channel MOSFET, 335 mA, 55 V, 3-Pin SOT-23 Nexperia BSH111BKR |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 335 mA Maximum Drain Source Voltage = 55 V
패키지 = TO-236
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 8.1 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 1.3V Minimum Gate Threshold Voltage = 0.6V Maximum Power Dissipation = 1.45 W Transistor Configuration = Single Maximum Gate Source Voltage = 10 V Width = 1.4mm
높이 = 1mm Logic- and Standard Level MOSFETs in a variety of packages. Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technologyLow threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 3 kV HBM Relay driver High-speed line driver Low-side loadswitch Switching circuits