■ 제품필수정보

제조사	Nexperia
제조사품명	BSH111BKR
간략설명	N-Channel MOSFET, 335 mA, 55 V, 3-Pin SOT-23 Nexperia BSH111BKR

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 335 mA Maximum Drain Source Voltage = 55 V
패키지 = TO-236
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 8.1 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 1.3V Minimum Gate Threshold Voltage = 0.6V Maximum Power Dissipation = 1.45 W Transistor Configuration = Single Maximum Gate Source Voltage = 10 V
최대 작동 온도 = +150 °C
시리즈 = BSH111BK