■ 제품필수정보
| 제조사 |
MagnaChip |
| 제조사품명 |
MDF11N60BTH |
| 간략설명 |
N-Channel MOSFET, 11 A, 660 V, 3-Pin TO-220F MagnaChip MDF11N60BTH |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 11 A Maximum Drain Source Voltage = 660 V
패키지 = TO-220F
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 550 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Maximum Power Dissipation = 49 W Transistor Configuration = Single Maximum Gate Source Voltage = -30 V, +30 V Width = 4.93mm
높이 = 16.13mm High Voltage (HV) MOSFET. High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
