■ 제품필수정보

제조사	Infineon
제조사품명	BSZ097N10NS5ATMA1
간략설명	N-Channel MOSFET, 40 A, 100 V, 8-Pin TSDSON Infineon BSZ097N10NS5ATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 40 A Maximum Drain Source Voltage = 100 V
패키지 = TSDSON
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 13 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.8V Minimum Gate Threshold Voltage = 2.2V Maximum Power Dissipation = 69 W Transistor Configuration = Single Maximum Gate Source Voltage = 20 V
최대 작동 온도 = +150 °C Forward Diode Voltage = 1.2V OptiMOS??5 100V, Infineon??s latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS??5 100V MOSFETs offer the industry??s lowest R DS(on)Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% R DS(on) reduction of up to 44% Benefits: Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Target Applications: Telecom Server Solar Low voltage drives Light electric vehicles Adapter