■ 제품필수정보

제조사	Infineon
제조사품명	IPD068N10N3GATMA1
간략설명	N-Channel MOSFET, 90 A, 100 V, 3-Pin DPAK Infineon IPD068N10N3GATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 90 A Maximum Drain Source Voltage = 100 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 12.3 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.5V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 150 W Transistor Configuration = Single Maximum Gate Source Voltage = 20 V
칩당 요소 수 = 1
시리즈 = IPD068N10N3 G Infineon OptiMOS?? Power MOSFETs, 100V and over