■ 제품필수정보

제조사	Infineon
제조사품명	BFP842ESDH6327XTSA1
간략설명	Infineon BFP842ESDH6327XTSA1 NPN Transistor, 40 mA, 3.25 V, 4-Pin SOT-343

■ 제품사양

Transistor
타입 = NPN Maximum DC Collector Current = 40 mA Maximum Collector Emitter Voltage = 3.25 V
패키지 = SOT-343
장착형태 = Surface Mount Maximum Power Dissipation = 120 mW Transistor Configuration = Single Maximum Collector Base Voltage = 3.5 V, 4.1 V Maximum Operating Frequency = 60 GHz
핀수 = 4
칩당 요소 수 = 1
크기 = 2 x 1.25 x 0.8mm The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 - 3.5 GHz LNA applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP842ESD provides inherently good input power match as well as inherently good noise match between 2.3 and 3.5 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a high transducer gain in the application.Robust very low noise amplifier based on Infineons reliable, high volume SiGe:C technology Unique combination of high end RF performance and robustness High linearity High transition frequency Transducer gain Ideal for low voltage applications Low power consumption, ideal for mobile applications Easy to use Pb free and halogen free industry standard package with visible leads