■ 제품필수정보

제조사	Vishay
제조사품명	SIHG20N50E-GE3
간략설명	N-Channel MOSFET, 19 A, 500 V, 3-Pin TO-247AC Vishay SIHG20N50E-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 19 A Maximum Drain Source Voltage = 500 V
패키지 = TO-247AC
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 180 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 179 W Transistor Configuration = Single Maximum Gate Source Voltage = -30 V, +30 V Width = 5.31mm
높이 = 20.82mm N-Channel MOSFET, E
시리즈, Low Figure-of-Merit, Vishay Semiconductor. The E
시리즈 Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS). Features. Low figure-of-merit (FOM) RDS(on) x Qg Low input capacitance (Ciss) Low on-resistance (RDS(on)) Ultra-low gate charge (Qg) Fast switching Reduced switching and conduction losses